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Download Keegan Burke Burnt Bridges prod Dopant Beats
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File size: 4.57 MB
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Source link: http://sciencestage.com/d/5639279/dopant-activation-and-ultralow-resistance-ohmic-contacts-to-si-ion-implanted-gan-using-pressurized-r.html
Source title: Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing - Dopant, activation, and, ultralow, resistance, ohmic, contacts, to, Si-ion-implanted, GaN, using, pressurized, rapid, thermal, annealing, Abstract , Activation, annealing, of, Si, implants, in, metalorganic-chemical-vapor-de, position-grown, GaN, has, been, studied, for, use, in, ohmic, contacts., Si, was, implanted, in, semi-insulating, GaN, at, 100, keV, with, doses, from, 5ױ014, to, 1.5ױ016, cm-2., Rapid, thermal, annealing, at, ~1500, ?C, with, 100, bar, N2, overpressure, was, used, for, dopant, activation, resulting, in, a, minimum, sheet, resistance, of, 13.9, O/square, for, a, dose, of, 7ױ015, cm-2., Secondary-ion-mass-spectroscop, y, measurements, showed, a, post-activation, broadening, of, the, dopant, concentration, peak, by, 20, nm, (at, half, the, maximum), while, x-ray, triple-axis, ??2?, scans, indicated, nearly, complete, implant, damage, recovery., Transfer-length-method, measurements, of, the, resistance, of, Ti/Al/Ni/Au, contacts, to, activated, GaN:Si, (5ױ015, cm-2, at, 100, keV), indicated, contact, resistances, of, 0.07, and, 0.02, O, mm, for, as-deposited, and, subsequently, annealed, contacts, respectively. - sciencestage.com Engineering
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Keegan Burke - Burnt Bridges prod. Dopant Beats.mp3
File size: 4.57 MB
Download from mediafire.com:
Source link: http://sciencestage.com/d/5639279/dopant-activation-and-ultralow-resistance-ohmic-contacts-to-si-ion-implanted-gan-using-pressurized-r.html
Source title: Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing - Dopant, activation, and, ultralow, resistance, ohmic, contacts, to, Si-ion-implanted, GaN, using, pressurized, rapid, thermal, annealing, Abstract , Activation, annealing, of, Si, implants, in, metalorganic-chemical-vapor-de, position-grown, GaN, has, been, studied, for, use, in, ohmic, contacts., Si, was, implanted, in, semi-insulating, GaN, at, 100, keV, with, doses, from, 5ױ014, to, 1.5ױ016, cm-2., Rapid, thermal, annealing, at, ~1500, ?C, with, 100, bar, N2, overpressure, was, used, for, dopant, activation, resulting, in, a, minimum, sheet, resistance, of, 13.9, O/square, for, a, dose, of, 7ױ015, cm-2., Secondary-ion-mass-spectroscop, y, measurements, showed, a, post-activation, broadening, of, the, dopant, concentration, peak, by, 20, nm, (at, half, the, maximum), while, x-ray, triple-axis, ??2?, scans, indicated, nearly, complete, implant, damage, recovery., Transfer-length-method, measurements, of, the, resistance, of, Ti/Al/Ni/Au, contacts, to, activated, GaN:Si, (5ױ015, cm-2, at, 100, keV), indicated, contact, resistances, of, 0.07, and, 0.02, O, mm, for, as-deposited, and, subsequently, annealed, contacts, respectively. - sciencestage.com Engineering
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Los Vengadores (Prod. Beast Beats NY).mp3 ( 6.3 MB )
Incomum - Falsos Padroes (Prod. Butuca Beats).zip ( 3.9 MB )
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MISSÃO - De la Rosa Mc (Prod. Jeff Beats).mp3 ( 10.32 MB )
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